ティー・ケー・エス合同会社

AVP Technology

マグネトロンスパッタ装置、イオンビームスパッタ装置、並びにイオンビームエッチング装置を中心に装置の開発ならびに製造を行うと共に真空プロセス装置メーカー各社のビンテージ設備に最新の制御を組み込み、既に確立された製造プロセスをそのまま生かすプロセス装置の再整備事業を行っています。
ご提供する設備は全てコストパフォーマンスに優れ、かつまた卓抜したプロセス性能と高稼働率運転が出来ますので、低コストオブオーナーシップ(COO)の優れた設備となっています。 
従来のプロセス設備では採算が取れないデバイスの製造に最適な設備をご提供いたします。

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製品一覧

  • CLUSTER PVD -オリジナル品

    avp_cluster_pvd

    Configuration Up to 6 Process Modules(PM); or Customized Layout/PM/Components
    Process Module PVD/RF Etch/HR PVD/IBE, and Custom
    Auxiliary Module Wafer Aligner
    Auxiliary Module Wafer Aligner
    Wafer Size Up to 8″
    Wafer backside cool Optional(Typically for High Power Deposition)
    Wafer Heating Optional(Typically for Dielectric Films Deposition)
    Align Magnetic Field Optional/Electromagnet(Typically for Magnetic Film Deposition)
    Cathode DC Magnetron/Pulsed DC Magnetron/RF/RF Magnetron
    Typical Max. Power 5kW for DC/PDC; 10kW for RF/RF Magnetron
    Typical Process Gas Ar, O2, N2
    Base Pressure Under than 5 * 10E-8 Torr
    Vacuum Pump Cyro/Turbo, Rotary/Dry
    System Automation GE Fanuc PLC series 90-30
    Process Recipe/ Visualization Window based GUI software w/Remote AccessSupport
    Typical Thickness Uniformity (1σ) Under than 1.0% with 49Pts/5mmEE

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  • CLUSTER HR PVD -オリジナル品

    CLUSTER HR PVD

    Configuration Can be clustered with other functional process modules
    Process Module HR PVD with assisted remote ion source
    Auxiliary Module Wafer Aligner
    Wafer Size Up to 8″
    Wafer backside cool Wafer temperature Under than 50 degree celsius
    Substrate Rotation 0~30RPM
    Substrate Fixture angle 10~80 Degrees
    Cathode RF+PDC, or PDC
    Typical Remote Ion Source Power 2kW RF
    Typical Max. Target Power 5kW for DC/PDC; 10kW for RF
    Typical Process Gas Ar, O2, N2
    Base Pressure Under than 8 * 10E-8 Torr
    Vacuum Pump Turbo pump + CTI Water Pump + Mech Pump
    System Automation GE Fanuc PLC series 90-30
    Process Recipe/ Visualization Window based GUI software w/Remote AccessSupport
    Typical Thickness Uniformity (1σ) Under than 1.0% with 49Pts/5mmEE

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  • IN-LINE PVD -オリジナル品

    Chamber Dimension Custom Design or 1.4m * 1.4m * 0.3m(w * l * h)
    Pre-treatment Heat/Plasma Etch
    Pre-heat Temp. Max. 500 degree celsius
    Plasma Etch (Optional) Linear/RF Diode Plasma Etch
    Ultimate Pressure Under than 5 *10E-7 Torr
    Vacuum Pump Cyro/Turbo, Rotary/Dry
    Process Recipe/Visualization Window based GUI software
    Sputtering
    Magnetron Cathode DC/Pulsed DC/RF, Planar/Rotary
    Generator Power Max. 20kW
    Typical Process Gas Ar, O2, N2
    Typical Target Material ITO, SnO2, ZnO2, AZO, Al2O3, SiO2, SiN, Si, DLC, Ag, Cu, Al, Ni, Cr, etc.
    Typical thickness Uniformity ±5%
    Evaporation Opptional

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  • IBE SYSTEM -オリジナル品

    Chamber Material Stainless Steel
    Configuration Single Loader or Cluster Layout
    Process Module IonBeam Etching with RF Ion Source
    RF Ion Source 2kW SEREN Power Supply and Machining Network
    Grid AVP LCD/HCD GRID Set
    PBN Filament/Filamentless, SORENSEN 60/600V
    Fixture Control GAIL Motion Control System for Rotation/Tilt
    Fixture Rotation 0~15RPM
    Fixture Tilt 0~160Degree
    Wafer Size Up to 8″wafers or 10.5″ Platen
    Wafer backside cool Helium Cooling
    End Point Detector Optional
    Typical Gas Channel # 3 channels with 100 sccm MFC
    Typical Process Gas Ar, O2
    Base Pressure Under than 2 * 10E-7 Torr
    High Vacuum Pump Turbo; Turbo * Water/Cryo (Optional)
    System Automation GE Fanuc PLC series 90-30
    Process Recipe Window based GUI software w/Remote Access Support
    Etching Uniformity Typically 1σ < 1.0%
    Etching Rate Variable, 2~90 nm/min for SiO2 film

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  • Cluster PVD System -他社再生品

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  • CORONA Multi-Target PVD System -他社再生品

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  • 6-Target GMR PVD System -他社再生品

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  • Ion Beam Etching System -他社再生品

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  • ICP RIE System -他社再生品

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